Part Details for HGTP10N50E1D by Harris Semiconductor
Overview of HGTP10N50E1D by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for HGTP10N50E1D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGTP10N50E1D-ND
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DigiKey | 17.5A, 500V, N-CHANNEL IGBT Min Qty: 96 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
3712 In Stock |
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$3.1400 | Buy Now |
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Rochester Electronics | 17.5A, 500V, N-Channel IGBT ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 3712 |
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$2.7000 / $3.1700 | Buy Now |
Part Details for HGTP10N50E1D
HGTP10N50E1D CAD Models
HGTP10N50E1D Part Data Attributes:
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HGTP10N50E1D
Harris Semiconductor
Buy Now
Datasheet
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HGTP10N50E1D
Harris Semiconductor
Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 17.5 A | |
| Collector-Emitter Voltage-Max | 500 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 1000 ns | |
| Gate-Emitter Thr Voltage-Max | 4.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 50 ns | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 400 ns | |
| Turn-on Time-Max (ton) | 50 ns | |
| VCEsat-Max | 3.2 V |