Datasheets
HGTP20N60C3R by:

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Part Details for HGTP20N60C3R by Harris Semiconductor

Overview of HGTP20N60C3R by Harris Semiconductor

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for HGTP20N60C3R

Part # Distributor Description Stock Price Buy
DISTI # 2156-HGTP20N60C3R-ND
DigiKey 40A, 600V, RUGGED N-CHANNEL IGBT Min Qty: 62 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 158
In Stock
  • 62 $4.9100
$4.9100 Buy Now
Rochester Electronics 40A, 600V, RUGGED UFS SERIES N-Channel IGBT RoHS: Not Compliant Status: Obsolete Min Qty: 1 158
  • 1 $4.9600
  • 25 $4.8600
  • 100 $4.6600
  • 500 $4.4600
  • 1,000 $4.2200
$4.2200 / $4.9600 Buy Now

Part Details for HGTP20N60C3R

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HGTP20N60C3R Part Data Attributes

HGTP20N60C3R Harris Semiconductor
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HGTP20N60C3R Harris Semiconductor Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 400 ns
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 164 W
Qualification Status Not Qualified
Rise Time-Max (tr) 40 ns
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 390 ns
Turn-on Time-Nom (ton) 34 ns

Alternate Parts for HGTP20N60C3R

This table gives cross-reference parts and alternative options found for HGTP20N60C3R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP20N60C3R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTP20N60C3R Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel Fairchild Semiconductor Corporation HGTP20N60C3R vs HGTP20N60C3R
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HGTP20N60C3R vs SGP13N60UF
HGTP12N60A4 Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN Fairchild Semiconductor Corporation HGTP20N60C3R vs HGTP12N60A4
HGT1S12N60C3DR Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel Harris Semiconductor HGTP20N60C3R vs HGT1S12N60C3DR
HGTP12N60C3 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, Fairchild Semiconductor Corporation HGTP20N60C3R vs HGTP12N60C3
HGT1S3N60C3D Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-262AA Harris Semiconductor HGTP20N60C3R vs HGT1S3N60C3D
HGTG20N100D2 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247 Harris Semiconductor HGTP20N60C3R vs HGTG20N100D2
HGT1S12N60A4DS9A Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB Fairchild Semiconductor Corporation HGTP20N60C3R vs HGT1S12N60A4DS9A
IRG4PC30W Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG HGTP20N60C3R vs IRG4PC30W
IRG4PC30KDPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG HGTP20N60C3R vs IRG4PC30KDPBF
FGH40N6S2D Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTP20N60C3R vs FGH40N6S2D

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