Part Details for HGTP5N120BND by Harris Semiconductor
Overview of HGTP5N120BND by Harris Semiconductor
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Energy and Power Systems
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Part Details for HGTP5N120BND
HGTP5N120BND CAD Models
HGTP5N120BND Part Data Attributes
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HGTP5N120BND
Harris Semiconductor
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Datasheet
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HGTP5N120BND
Harris Semiconductor
Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, HYPER FAST RECOVERY | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 21 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 182 ns | |
Turn-on Time-Nom (ton) | 20 ns |