HGTP5N120BND
Description: 21A, 1200V, N-CHANNEL IGBT, TO-220AB

Overview of HGTP5N120BND by Intersil Corporation

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Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for HGTP5N120BND by Intersil Corporation

HGTP5N120BND
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Package Description
TO-220AB ALTERNATE VERSION, 3 PIN
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS, HYPER FAST RECOVERY
Case Connection
COLLECTOR
Collector Current-Max (IC)
21 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
182 ns
Turn-on Time-Nom (ton)
20 ns
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  1. HGTP5N120BND
    Intersil Corporation
    21A, 1200V, N-CHANNEL IGBT, TO-220AB
    VS

Alternate Parts for HGTP5N120BND

This table gives cross-reference parts and alternative options found for HGTP5N120BND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP5N120BND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HGTP5N120BND 1200V, NPT IGBT, 800-TUBE onsemi HGTP5N120BND vs HGTP5N120BND
HGTP5N120BND Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN Fairchild Semiconductor Corporation HGTP5N120BND vs HGTP5N120BND
Part Number Description Manufacturer Compare
HGTP5N120BND Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN Fairchild Semiconductor Corporation HGTP5N120BND vs HGTP5N120BND
HGTP5N120BND 1200V, NPT IGBT, 800-TUBE onsemi HGTP5N120BND vs HGTP5N120BND

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