Part Details for HN1A01FU by Toshiba America Electronic Components
Overview of HN1A01FU by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for HN1A01FU
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 54296 |
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RFQ | ||
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Chip1Cloud | PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) | 8000 |
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RFQ |
Part Details for HN1A01FU
HN1A01FU CAD Models
HN1A01FU Part Data Attributes
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HN1A01FU
Toshiba America Electronic Components
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Datasheet
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HN1A01FU
Toshiba America Electronic Components
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2J1A, 6 PIN, BIP General Purpose Small Signal
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Collector Current-Max (IC) | 0.15 A | |
Collector-Base Capacitance-Max | 7 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SEPARATE, 2 ELEMENTS | |
DC Current Gain-Min (hFE) | 120 | |
JESD-30 Code | R-PDSO-G6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.2 W | |
Power Dissipation-Max (Abs) | 0.2 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 80 MHz | |
VCEsat-Max | 0.3 V |