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Power Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10AC7463
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Newark | Mosfet, Dual N-Ch, 30V, Hsop, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:27A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0067Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Rohm HP8K24TB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.7300 / $1.6500 | Buy Now |
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Ameya Holding Limited | Min Qty: 1 | 2693-Authorized Distributor |
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$0.6292 / $1.4798 | Buy Now |
DISTI #
HP8K24TB
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Avnet Asia | MOSFET Array Dual N-CH 30V 27A/80A 8-Pin HSOP Emboss T/R (Alt: HP8K24TB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
HP8K24TB
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Avnet Silica | MOSFET Array Dual N-CH 30V 27A/80A 8-Pin HSOP Emboss T/R (Alt: HP8K24TB) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
C1S625901680517
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Chip1Stop | Trans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 100 |
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$0.4380 / $0.6400 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 | 5000 |
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$0.4540 / $0.6900 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 | 2290 |
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$0.4540 / $0.6900 | Buy Now |
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LCSC | 30V 3W 2.5V1mA 2 N-Channel HSOP-8 MOSFETs ROHS | 20 |
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$1.7982 / $1.9110 | Buy Now |
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Win Source Electronics | HP8K24 IS THE HIGH RELIABILITY T | 2850 |
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$0.4820 / $0.7229 | Buy Now |
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HP8K24TB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
HP8K24TB
ROHM Semiconductor
Power Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | HSOP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 21 Weeks | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 16.5 mJ | |
Case Connection | DRAIN SOURCE | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.0133 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e3 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |