Datasheets
HUF75309D3 by:

Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Details for HUF75309D3 by Harris Semiconductor

Overview of HUF75309D3 by Harris Semiconductor

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Price & Stock for HUF75309D3

Part # Distributor Description Stock Price Buy
Rochester Electronics 17A, 55V, 0.070 OHM, N-Channel, ULTRAFET POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 975
  • 1 $0.3071
  • 25 $0.3010
  • 100 $0.2887
  • 500 $0.2764
  • 1,000 $0.2610
$0.2610 / $0.3071 Buy Now

Part Details for HUF75309D3

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HUF75309D3 Part Data Attributes

HUF75309D3 Harris Semiconductor
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HUF75309D3 Harris Semiconductor Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 45 W
Power Dissipation-Max (Abs) 45 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 70 ns

Alternate Parts for HUF75309D3

This table gives cross-reference parts and alternative options found for HUF75309D3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75309D3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75309D3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUF75309D3 vs HUF75309D3
HUF75309D3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation HUF75309D3 vs HUF75309D3
Part Number Description Manufacturer Compare
HUF75309D3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation HUF75309D3 vs HUF75309D3
BUZ10 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited HUF75309D3 vs BUZ10
HUFA76409D3 Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation HUF75309D3 vs HUFA76409D3
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix HUF75309D3 vs BUZ71
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi HUF75309D3 vs MTD1N50E1
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation HUF75309D3 vs FQD24N08
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation HUF75309D3 vs HUF75309P3_NL
IRFR1205TRLPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG HUF75309D3 vs IRFR1205TRLPBF
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HUF75309D3 vs IRFZ30
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUF75309D3 vs RFD14N06L

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