Datasheets
HUF75309D3 by:

19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Part Details for HUF75309D3 by Intersil Corporation

Overview of HUF75309D3 by Intersil Corporation

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Part Details for HUF75309D3

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HUF75309D3 Part Data Attributes

HUF75309D3 Intersil Corporation
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HUF75309D3 Intersil Corporation 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75309D3

This table gives cross-reference parts and alternative options found for HUF75309D3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75309D3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75309D3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation HUF75309D3 vs HUF75309D3
Part Number Description Manufacturer Compare
HUFA76409P3 18A, 60V, 0.074ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation HUF75309D3 vs HUFA76409P3
RFD14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, 3 PIN Fairchild Semiconductor Corporation HUF75309D3 vs RFD14N05L
934055349118 TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power NXP Semiconductors HUF75309D3 vs 934055349118
HUF76419D3S 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309D3 vs HUF76419D3S
HUFA76409D3S 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309D3 vs HUFA76409D3S
HUFA75309D3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUF75309D3 vs HUFA75309D3
PHD20N06T,118 PHD20N06T - N-channel TrenchMOS standard level FET DPAK 3-Pin NXP Semiconductors HUF75309D3 vs PHD20N06T,118
HUF76409D3S 17A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75309D3 vs HUF76409D3S
HUF76413D3 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUF75309D3 vs HUF76413D3
IRFIZ34GPBF Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier HUF75309D3 vs IRFIZ34GPBF

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