HUF75321S3S
Description: Power Field-Effect Transistor, 0.032ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-4

Overview of HUF75321S3S by Harris Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for HUF75321S3S by Harris Semiconductor

Part # Manufacturer Description Stock Price Buy
Rochester Electronics HUF75321 - N-Channel ULTRAFET POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 991
  • 1 $0.4323
  • 25 $0.4237
  • 100 $0.4064
  • 500 $0.3891
  • 1,000 $0.3675
$0.3675 / $0.4323 Buy Now

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Part Data Attributes for HUF75321S3S by Harris Semiconductor

HUF75321S3S
Harris Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Package Description
PLASTIC PACKAGE-4
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
Drain Current-Max (ID)
31 A
Drain-source On Resistance-Max
0.032 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
70 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. HUF75321S3S
    Harris Semiconductor
    Power Field-Effect Transistor, 0.032ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-4
    VS

Alternate Parts for HUF75321S3S

This table gives cross-reference parts and alternative options found for HUF75321S3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75321S3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HUF75321S3ST 35A, 55V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF75321S3S vs HUF75321S3ST
HUF75321S3S Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75321S3S vs HUF75321S3S
HUF75321S3S_NL Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75321S3S vs HUF75321S3S_NL
HUF75321S3S 35A, 55V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC HUF75321S3S vs HUF75321S3S
HUF75321S3ST Power Field-Effect Transistor, 0.032ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-4 Harris Semiconductor HUF75321S3S vs HUF75321S3ST
Part Number Description Manufacturer Compare
HUF75321S3S Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75321S3S vs HUF75321S3S
HUF75321S3S_NL Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75321S3S vs HUF75321S3S_NL
HUF75321S3S 35A, 55V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF75321S3S vs HUF75321S3S
HUF75321S3ST Power Field-Effect Transistor, 0.032ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-4 Harris Semiconductor HUF75321S3S vs HUF75321S3ST
HUF75321S3ST 35A, 55V, 0.034ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF75321S3S vs HUF75321S3ST

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