Part Details for HUF75344A3 by Fairchild Semiconductor Corporation
Overview of HUF75344A3 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for HUF75344A3
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 75A, 55V, 0.008ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 616 |
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$1.2800 / $1.5000 | Buy Now |
Part Details for HUF75344A3
HUF75344A3 CAD Models
HUF75344A3 Part Data Attributes
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HUF75344A3
Fairchild Semiconductor Corporation
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Datasheet
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HUF75344A3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PN, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-3PN | |
Package Description | ROHS COMPLIANT, TO-3PN, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 1153 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 288.5 W | |
Pulsed Drain Current-Max (IDM) | 300 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |