Datasheets
HUF75344G3 by:

N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL

Part Details for HUF75344G3 by Fairchild Semiconductor Corporation

Overview of HUF75344G3 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for HUF75344G3

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-247AD 1972
  • 1 $3.9570
  • 293 $1.5828
  • 1,265 $1.4509
$1.4509 / $3.9570 Buy Now

Part Details for HUF75344G3

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HUF75344G3 Part Data Attributes

HUF75344G3 Fairchild Semiconductor Corporation
Buy Now Datasheet
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HUF75344G3 Fairchild Semiconductor Corporation N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Manufacturer Package Code TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 285 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75344G3

This table gives cross-reference parts and alternative options found for HUF75344G3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75344G3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75345G3 75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation HUF75344G3 vs HUF75345G3
HUF75344G3 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor HUF75344G3 vs HUF75344G3
HUF75344G3_NL Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HUF75344G3 vs HUF75344G3_NL
HUF75337G3 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation HUF75344G3 vs HUF75337G3
Part Number Description Manufacturer Compare
BUZ342 Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, Siemens HUF75344G3 vs BUZ342
HUF75337G3 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation HUF75344G3 vs HUF75337G3
IRFP054PBF Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix HUF75344G3 vs IRFP054PBF
HUF75345G3 Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Harris Semiconductor HUF75344G3 vs HUF75345G3
IRFP064PBF Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier HUF75344G3 vs IRFP064PBF
HUF75333G3 Power Field-Effect Transistor, 56A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Harris Semiconductor HUF75344G3 vs HUF75333G3
HUF75337G3 Power Field-Effect Transistor, 62A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Harris Semiconductor HUF75344G3 vs HUF75337G3
HUF75339G3 70A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation HUF75344G3 vs HUF75339G3
HUF75344G3_NL Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HUF75344G3 vs HUF75344G3_NL
HUF75344G3 Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor HUF75344G3 vs HUF75344G3

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