Datasheets
HUF75344P3 by:

N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL

Part Details for HUF75344P3 by Fairchild Semiconductor Corporation

Results Overview of HUF75344P3 by Fairchild Semiconductor Corporation

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HUF75344P3 Information

HUF75344P3 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for HUF75344P3

Part # Distributor Description Stock Price Buy
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 3800
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for HUF75344P3

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HUF75344P3 Part Data Attributes

HUF75344P3 Fairchild Semiconductor Corporation
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HUF75344P3 Fairchild Semiconductor Corporation N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description TO-220AB, 3 PIN
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 285 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75344P3

This table gives cross-reference parts and alternative options found for HUF75344P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75344P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF3205 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN HUF75344P3 vs IRF3205
HUF75344P3_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN HUF75344P3 vs HUF75344P3_NL
HUF75344P3 Harris Semiconductor Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB HUF75344P3 vs HUF75344P3
AUIRF3205 International Rectifier Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET HUF75344P3 vs AUIRF3205
HUF75344P3 onsemi $1.8520 N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ, TO-220-3, 800-TUBE HUF75344P3 vs HUF75344P3
IRF3205HR International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN HUF75344P3 vs IRF3205HR
Part Number Manufacturer Composite Price Description Compare
IRF3205 International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN HUF75344P3 vs IRF3205
IRF3205VPBF International Rectifier Check for Price Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 HUF75344P3 vs IRF3205VPBF
AUIRF3205 Infineon Technologies AG Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET HUF75344P3 vs AUIRF3205
MTP75N05HD onsemi Check for Price 75A, 50V, 0.0095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN HUF75344P3 vs MTP75N05HD
HUF75339P3 Intersil Corporation Check for Price 75A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB HUF75344P3 vs HUF75339P3
IRF3205Z International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN HUF75344P3 vs IRF3205Z
FS22SM-10 Powerex Power Semiconductors Check for Price Power Field-Effect Transistor, 22A I(D), 500V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN HUF75344P3 vs FS22SM-10
HUFA75345P3 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN HUF75344P3 vs HUFA75345P3
FS22SM-10 Renesas Electronics Corporation Check for Price 22A, 500V, 0.29ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN HUF75344P3 vs FS22SM-10
HUF75339P3 onsemi $1.3378 N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ, TO-220-3, 800-TUBE HUF75344P3 vs HUF75339P3

HUF75344P3 Related Parts

HUF75344P3 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the HUF75344P3 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.

  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the device away from noise sources, and use shielding and filtering components as needed.

  • The HUF75344P3 is rated for a maximum voltage of 40V. Using it in a high-voltage application above this rating may damage the device or affect its reliability.

  • To troubleshoot issues, start by checking the device's operating conditions, such as voltage, current, and temperature. Use oscilloscopes and thermal imaging tools to identify the root cause of the issue.

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