Datasheets
HUF75645S3ST by:

N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ, 800-REEL

Part Details for HUF75645S3ST by onsemi

Overview of HUF75645S3ST by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HUF75645S3ST

Part # Distributor Description Stock Price Buy
DISTI # 07AH4042
Newark Mosfet, N-Ch, 100V, 75A, To-263Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:75A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0115Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Onsemi HUF75645S3ST Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 15R3452
Newark N Channel Mosfet, 100V, 75Ma, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:75A, On Resistance Rds(On):0.014Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Onsemi HUF75645S3ST Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $1.9800
$1.9800 Buy Now
DISTI # 98B2180
Newark N Channel Mosfet, 100V, 75Ma, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:75A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Product Range:- Rohs Compliant: Yes |Onsemi HUF75645S3ST Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # HUF75645S3STCT-ND
DigiKey MOSFET N-CH 100V 75A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 19375
In Stock
  • 1 $3.1100
  • 10 $2.6100
  • 100 $2.1118
  • 800 $1.8772
  • 1,600 $1.6073
  • 2,400 $1.5134
  • 5,600 $1.4520
$1.4520 / $3.1100 Buy Now
DISTI # 3004001
element14 Asia-Pacific MOSFET, N-CH, 100V, 75A, TO-263AB RoHS: Compliant Min Qty: 1 Container: Cut Tape 400
  • 1 $2.8769
  • 10 $2.4585
  • 100 $2.0476
  • 500 $1.9228
  • 800 $1.6659
  • 1,600 $1.6292
  • 2,400 $1.5852
$1.5852 / $2.8769 Buy Now
DISTI # 3004001RL
element14 Asia-Pacific MOSFET, N-CH, 100V, 75A, TO-263AB RoHS: Compliant Min Qty: 100 Container: Reel 400
  • 100 $2.0476
  • 500 $1.9228
  • 800 $1.6659
  • 1,600 $1.6292
  • 2,400 $1.5852
$1.5852 / $2.0476 Buy Now
DISTI # 3004001RL
Farnell MOSFET, N-CH, 100V, 75A, TO-263AB RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel 400
  • 100 $1.9714
  • 500 $1.8451
$1.8451 / $1.9714 Buy Now
DISTI # 3004001
Farnell MOSFET, N-CH, 100V, 75A, TO-263AB RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape 400
  • 1 $3.1215
  • 10 $2.3632
  • 100 $1.9714
  • 500 $1.8451
$1.8451 / $3.1215 Buy Now

Part Details for HUF75645S3ST

HUF75645S3ST CAD Models

HUF75645S3ST Part Data Attributes

HUF75645S3ST onsemi
Buy Now Datasheet
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HUF75645S3ST onsemi N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ, 800-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 32 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 310 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75645S3ST

This table gives cross-reference parts and alternative options found for HUF75645S3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75645S3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75645S3ST Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation HUF75645S3ST vs HUF75645S3ST
HUF75645S3S_NL Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75645S3ST vs HUF75645S3S_NL
HUF75645S3S 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF75645S3ST vs HUF75645S3S
HUF75645S3ST 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF75645S3ST vs HUF75645S3ST
HUF75645S3ST_NL Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75645S3ST vs HUF75645S3ST_NL
HUF75645S3S Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75645S3ST vs HUF75645S3S
Part Number Description Manufacturer Compare
HUF75645S3ST Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation HUF75645S3ST vs HUF75645S3ST
HUF75645S3S_NL Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75645S3ST vs HUF75645S3S_NL
HUF75645S3S Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75645S3ST vs HUF75645S3S
HUF75645S3S 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF75645S3ST vs HUF75645S3S
HUF75645S3ST 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF75645S3ST vs HUF75645S3ST
HUF75645S3ST_NL Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation HUF75645S3ST vs HUF75645S3ST_NL

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