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Transistors Power Field-Effect Transistors HUF76139S3ST

Transistors
HUF76139S3ST
Description: Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN

Overview of HUF76139S3ST by Fairchild Semiconductor Corporation

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Price & Stock for HUF76139S3ST by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 2156-HUF76139S3ST-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 606 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 1950
In Stock
  • 606 $0.5000
$0.5000 Buy Now
Bristol Electronics   492
RFQ
Rochester Electronics 75A, 30V, 0.01ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 1950
  • 1 $0.5005
  • 25 $0.4905
  • 100 $0.4705
  • 500 $0.4504
  • 1,000 $0.4254
$0.4254 / $0.5005 Buy Now
ComSIT USA 75A, 30V, 0.0075 OHM, N-CHANNEL, LOGIC LEVEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant Stock EU - 420
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

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Part Data Attributes for HUF76139S3ST by Fairchild Semiconductor Corporation
Parametric Data

HUF76139S3ST
Fairchild Semiconductor Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
TO-263AB, 3 PIN
Pin Count
4
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Additional Feature
ULTRA-LOW RESISTANCE
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
75 A
Drain-source On Resistance-Max
0.01 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
165 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. HUF76139S3ST
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
    VS

Alternate Parts for HUF76139S3ST

This table gives cross-reference parts and alternative options found for HUF76139S3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76139S3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HUF76139S3ST 75A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Rochester Electronics LLC HUF76139S3ST vs HUF76139S3ST
HUF76139S3ST_NL 75A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Rochester Electronics LLC HUF76139S3ST vs HUF76139S3ST_NL
HUF76139S3ST_NL Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HUF76139S3ST vs HUF76139S3ST_NL
HUF76139S3S 75A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76139S3ST vs HUF76139S3S
HUF76139S3S Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HUF76139S3ST vs HUF76139S3S
HUF76139S3ST Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Harris Semiconductor HUF76139S3ST vs HUF76139S3ST
Part Number Description Manufacturer Compare
HUF76139S3ST_NL Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HUF76139S3ST vs HUF76139S3ST_NL
HUF76139S3ST Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Harris Semiconductor HUF76139S3ST vs HUF76139S3ST
HUF76139S3S 75A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76139S3ST vs HUF76139S3S
HUF76139S3S Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation HUF76139S3ST vs HUF76139S3S
HUF76139S3ST 75A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76139S3ST vs HUF76139S3ST
HUF76139S3ST_NL 75A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Rochester Electronics LLC HUF76139S3ST vs HUF76139S3ST_NL

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