Datasheets
HUF76419D3ST by:

20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Details for HUF76419D3ST by Intersil Corporation

Overview of HUF76419D3ST by Intersil Corporation

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Part Details for HUF76419D3ST

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HUF76419D3ST Part Data Attributes:

HUF76419D3ST Intersil Corporation
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HUF76419D3ST Intersil Corporation 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF76419D3ST

This table gives cross-reference parts and alternative options found for HUF76419D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76419D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF76419D3ST 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF76419D3ST vs HUF76419D3ST
HUF76419D3ST_NL Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF76419D3ST vs HUF76419D3ST_NL
Part Number Description Manufacturer Compare
BUZ101SL Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens HUF76419D3ST vs BUZ101SL
HUF76429D3ST 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF76419D3ST vs HUF76429D3ST
934054570118 TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3, FET General Purpose Power NXP Semiconductors HUF76419D3ST vs 934054570118
IRF9Z34STRLPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix HUF76419D3ST vs IRF9Z34STRLPBF
IRFR1205TRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier HUF76419D3ST vs IRFR1205TRPBF
IRF9Z34NSPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HUF76419D3ST vs IRF9Z34NSPBF
HUF75309D3ST 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF76419D3ST vs HUF75309D3ST
NTD18N06T4G 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 Rochester Electronics LLC HUF76419D3ST vs NTD18N06T4G
HUFA75321D3ST 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF76419D3ST vs HUFA75321D3ST
NTD18N06LG 18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 Rochester Electronics LLC HUF76419D3ST vs NTD18N06LG

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