Part Details for HUF76629D3ST by Fairchild Semiconductor Corporation
Overview of HUF76629D3ST by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for HUF76629D3ST
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | HUF76629D3S - N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52mOhm RoHS: Compliant Status: Active Min Qty: 1 | 1670 |
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$1.1000 / $1.3000 | Buy Now |
Part Details for HUF76629D3ST
HUF76629D3ST CAD Models
HUF76629D3ST Part Data Attributes
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HUF76629D3ST
Fairchild Semiconductor Corporation
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Datasheet
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HUF76629D3ST
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Pin Count | 3 | |
Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for HUF76629D3ST
This table gives cross-reference parts and alternative options found for HUF76629D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76629D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF76629D3S | 20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | HUF76629D3ST vs HUF76629D3S |
HUF76629D3ST | 20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | HUF76629D3ST vs HUF76629D3ST |
HUF76629D3ST | 20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | HUF76629D3ST vs HUF76629D3ST |
HUF76629D3ST_NL | 20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | HUF76629D3ST vs HUF76629D3ST_NL |