Datasheets
HUFA76413DK8T by:

Automotive MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL

Part Details for HUFA76413DK8T by Fairchild Semiconductor Corporation

Overview of HUFA76413DK8T by Fairchild Semiconductor Corporation

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Price & Stock for HUFA76413DK8T

Part # Distributor Description Stock Price Buy
Rochester Electronics HUFA7641 - Power Field-Effect Transistor, 5.1A, 60V, 0.049ohm, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 30
  • 1 $0.7053
  • 25 $0.6912
  • 100 $0.6630
  • 500 $0.6348
  • 1,000 $0.5995
$0.5995 / $0.7053 Buy Now

Part Details for HUFA76413DK8T

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HUFA76413DK8T Part Data Attributes

HUFA76413DK8T Fairchild Semiconductor Corporation
Buy Now Datasheet
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HUFA76413DK8T Fairchild Semiconductor Corporation Automotive MOSFET, 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP, 2500/TAPE REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOIC
Package Description SO-8
Pin Count 8
Manufacturer Package Code 8LD, SOIC,JEDEC MS-012, .150" NARROW BODY, DUAL DAP
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 260 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUFA76413DK8T

This table gives cross-reference parts and alternative options found for HUFA76413DK8T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUFA76413DK8T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUFA76413DK8T_F085A Power Field-Effect Transistor, 5.1A I(D), 60V, 0.049ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Fairchild Semiconductor Corporation HUFA76413DK8T vs HUFA76413DK8T_F085A
HUFA76413DK8 Power Field-Effect Transistor, 5.1A I(D), 60V, 0.049ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation HUFA76413DK8T vs HUFA76413DK8
HUFA76413DK8 5.1A, 60V, 0.049ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC HUFA76413DK8T vs HUFA76413DK8
Part Number Description Manufacturer Compare
HAT2038RJ Power Field-Effect Transistor, 5A I(D), 60V, 0.084ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 Hitachi Ltd HUFA76413DK8T vs HAT2038RJ
UPA1857GR-9JG 3.8A, 60V, 0.095ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWER, TSSOP-8 Renesas Electronics Corporation HUFA76413DK8T vs UPA1857GR-9JG
UPA1857GR-9JG Power Field-Effect Transistor, 3.8A I(D), 60V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, TSSOP-8 NEC Electronics Group HUFA76413DK8T vs UPA1857GR-9JG
HUFA76413DK8T_F085A Power Field-Effect Transistor, 5.1A I(D), 60V, 0.049ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Fairchild Semiconductor Corporation HUFA76413DK8T vs HUFA76413DK8T_F085A
HUFA76413DK8 Power Field-Effect Transistor, 5.1A I(D), 60V, 0.049ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation HUFA76413DK8T vs HUFA76413DK8
SQ9945AEY-T1-E3 Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix HUFA76413DK8T vs SQ9945AEY-T1-E3
HAT2114R 6A, 60V, 0.05ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FP-8DA, SOP-8 Renesas Electronics Corporation HUFA76413DK8T vs HAT2114R
HAT2038R 5A, 60V, 0.084ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation HUFA76413DK8T vs HAT2038R
HUFA76413DK8 5.1A, 60V, 0.049ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC HUFA76413DK8T vs HUFA76413DK8
HAT2028R Power Field-Effect Transistor, 4A I(D), 60V, 0.16ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FP-8DA, SOP-8 Hitachi Ltd HUFA76413DK8T vs HAT2028R

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