Datasheets
HUFA76645S3ST-F085 by:

N-Channel Logic Level UltraFET® 100V, 75A, 15mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified

Part Details for HUFA76645S3ST-F085 by onsemi

Overview of HUFA76645S3ST-F085 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for HUFA76645S3ST-F085

Part # Distributor Description Stock Price Buy
DISTI # 48AC1214
Newark Nmos D2Pak 100V 35 Mohm/Reel Rohs Compliant: Yes |Onsemi HUFA76645S3ST-F085 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 512-HUFA76645S3ST085
Mouser Electronics MOSFET 100V 75A 0.015ohm N-CH RoHS: Compliant 8
  • 1 $3.6700
  • 10 $3.0800
  • 25 $2.9100
  • 100 $2.4900
  • 250 $2.3500
  • 500 $2.2100
  • 800 $1.8900
  • 2,400 $1.7800
$1.7800 / $3.6700 Buy Now
DISTI # 3616309
Farnell MOSFET'S - SINGLE RoHS: Compliant Min Qty: 800 Lead time: 14 Weeks, 1 Days Container: Reel 0
  • 800 $2.0979
$2.0979 Buy Now

Part Details for HUFA76645S3ST-F085

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HUFA76645S3ST-F085 Part Data Attributes:

HUFA76645S3ST-F085 onsemi
Buy Now Datasheet
Compare Parts:
HUFA76645S3ST-F085 onsemi N-Channel Logic Level UltraFET® 100V, 75A, 15mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ONSEMI
Part Package Code TO-263 2L (D2PAK)
Package Description ROHS COMPLIANT PACKAGE-3
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature ULTRA-LOW RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 310 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for HUFA76645S3ST-F085

This table gives cross-reference parts and alternative options found for HUFA76645S3ST-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUFA76645S3ST-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUFA76645S3ST_F085 Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation HUFA76645S3ST-F085 vs HUFA76645S3ST_F085
HUFA76645S3ST_F085 100V, 75A, 12mΩ, D2PAK, Logic Level N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL onsemi HUFA76645S3ST-F085 vs HUFA76645S3ST_F085
Part Number Description Manufacturer Compare
HUFA76645S3ST_F085 100V, 75A, 12mΩ, D2PAK, Logic Level N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL onsemi HUFA76645S3ST-F085 vs HUFA76645S3ST_F085
HUFA76645S3ST_F085 Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT PACKAGE-3 Fairchild Semiconductor Corporation HUFA76645S3ST-F085 vs HUFA76645S3ST_F085

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