Part Details for IBM0316169CT3D-10 by IBM
Overview of IBM0316169CT3D-10 by IBM
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Price & Stock for IBM0316169CT3D-10
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SDRAM, 1M x 16, 50 Pin, Plastic, TSOP | 567 |
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$7.4250 / $14.8500 | Buy Now |
Part Details for IBM0316169CT3D-10
IBM0316169CT3D-10 CAD Models
IBM0316169CT3D-10 Part Data Attributes
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IBM0316169CT3D-10
IBM
Buy Now
Datasheet
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IBM0316169CT3D-10
IBM
Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IBM MICROELECTRONICS | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 8 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 100 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.19 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for IBM0316169CT3D-10
This table gives cross-reference parts and alternative options found for IBM0316169CT3D-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IBM0316169CT3D-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HY57V161610CLTC-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | IBM0316169CT3D-10 vs HY57V161610CLTC-10 |
UPD4516161AG5-A12-9NF | Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics Group | IBM0316169CT3D-10 vs UPD4516161AG5-A12-9NF |
UPD4516161AG5-A12-9NF | Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | IBM0316169CT3D-10 vs UPD4516161AG5-A12-9NF |
UPD4516161AG5-A12L-9NF | Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | IBM0316169CT3D-10 vs UPD4516161AG5-A12L-9NF |
UPD4516161G5-A10-7JF | 1MX16 SYNCHRONOUS DRAM, 8ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Renesas Electronics Corporation | IBM0316169CT3D-10 vs UPD4516161G5-A10-7JF |
M5M4V16S40CTP-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | Mitsubishi Electric | IBM0316169CT3D-10 vs M5M4V16S40CTP-10 |
IBM0316169CT3-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | IBM | IBM0316169CT3D-10 vs IBM0316169CT3-10 |
HY57V161610BTC-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | IBM0316169CT3D-10 vs HY57V161610BTC-10 |
HY57V161610BLTC-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | IBM0316169CT3D-10 vs HY57V161610BLTC-10 |
HY57V161610CTC-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | IBM0316169CT3D-10 vs HY57V161610CTC-10 |