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Diodes / Rectifier Diodes / IDH20G120C5XKSA1
Datasheets
IDH20G120C5XKSA1 by: Infineon Technologies AG

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC, TO-220, 2 PIN

Part Details for IDH20G120C5XKSA1 by Infineon Technologies AG

Results Overview of IDH20G120C5XKSA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

IDH20G120C5XKSA1 Information

IDH20G120C5XKSA1 by Infineon Technologies AG is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for IDH20G120C5XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 12AC9656
Newark Sic Schottky Diode, 1.2Kv, 56A, To-220, Product Range:Thinq Gen V Series, Diode Configuration:Single, Repetitive Peak Reverse Voltage:1.2Kv, Average Forward Current:56A, Total Capacitive Charge:82Nc, Diode Case Style:To-220 Rohs Compliant: Yes |Infineon IDH20G120C5XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 86
  • 1 $2.3500
  • 10 $2.3500
  • 25 $2.3500
  • 50 $2.3500
  • 100 $2.3500
  • 250 $2.3500
  • 500 $2.3500
$2.3500 Buy Now
DISTI # 12AC9656
Avnet Americas Silicon Carbide Schottky Diode, thinQ, Single, 1.2 kV, 56 A, 82 nC, TO-220 - Bulk (Alt: 12AC9656) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk 86 Partner Stock
  • 1 $8.1600
  • 10 $4.9300
  • 25 $4.8200
  • 50 $4.7000
  • 100 $4.5900
$4.5900 / $8.1600 Buy Now
DISTI # 12AC9656
Avnet Americas Silicon Carbide Schottky Diode, thinQ, Single, 1.2 kV, 56 A, 82 nC, TO-220 - Bulk (Alt: 12AC9656) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk 86 Partner Stock
  • 1 $8.1600
  • 10 $4.9300
  • 25 $4.8200
  • 50 $4.7000
  • 100 $4.5900
$4.5900 / $8.1600 Buy Now
DISTI # IDH20G120C5XKSA1
Avnet Americas Silicon Carbide Schottky Diode, thinQ, Single, 1.2 kV, 56 A, 82 nC, TO-220 - Rail/Tube (Alt: IDH20G120C5XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 500 $4.2257
$4.2257 Buy Now
DISTI # IDH20G120C5XKSA1
Avnet Americas Silicon Carbide Schottky Diode, thinQ, Single, 1.2 kV, 56 A, 82 nC, TO-220 - Rail/Tube (Alt: IDH20G120C5XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 500 $4.2257
$4.2257 Buy Now
DISTI # IDH20G120C5XKSA1
Avnet Americas Silicon Carbide Schottky Diode, thinQ, Single, 1.2 kV, 56 A, 82 nC, TO-220 - Rail/Tube (Alt: IDH20G120C5XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 500 $4.2257
$4.2257 Buy Now
DISTI # 12AC9656
Avnet Americas Silicon Carbide Schottky Diode, thinQ, Single, 1.2 kV, 56 A, 82 nC, TO-220 - Bulk (Alt: 12AC9656) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Bulk 0
  • 1 $8.1600
  • 10 $4.9300
  • 25 $4.8200
  • 50 $4.7000
  • 100 $4.5900
$4.5900 / $8.1600 Buy Now
DISTI # IDH20G120C5XKSA1
TME Diode: Schottky rectifying, SiC, THT, 1.2kV, 20A, PG-TO220-2, 330W Min Qty: 1 0
  • 1 $8.7400
  • 10 $7.1300
  • 50 $6.9500
  • 100 $6.4700
  • 250 $6.2500
  • 500 $6.0100
$6.0100 / $8.7400 RFQ
DISTI # SP001347054
EBV Elektronik Silicon Carbide Schottky Diode thinQ Single 12 kV 56 A 82 nC TO220 (Alt: SP001347054) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 21 Weeks, 0 Days EBV - 3000
Buy Now
LCSC TO-220-2 SiC Diodes ROHS 3
  • 1 $8.2843
  • 10 $8.1077
  • 30 $7.9901
  • 100 $7.8724
$7.8724 / $8.2843 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 500 2500
  • 500 $6.4200
  • 2,500 $5.9400
$5.9400 / $6.4200 Buy Now

Part Details for IDH20G120C5XKSA1

IDH20G120C5XKSA1 CAD Models

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IDH20G120C5XKSA1 Part Data Attributes

Parametric Data
IDH20G120C5XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IDH20G120C5XKSA1 Infineon Technologies AG Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC, TO-220, 2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220, 2 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 4 Days
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY, PD-CASE
Application EFFICIENCY
Case Connection CATHODE
Configuration SINGLE
Diode Element Material SILICON CARBIDE
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.8 V
JEDEC-95 Code TO-220AC
JESD-30 Code R-PSFM-T2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 168 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation-Max 330 W
Rep Pk Reverse Voltage-Max 1200 V
Reverse Current-Max 123 µA
Surface Mount NO
Technology SCHOTTKY
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

Alternate Parts for IDH20G120C5XKSA1

This table gives cross-reference parts and alternative options found for IDH20G120C5XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IDH20G120C5XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IDH20G120C5 Infineon Technologies AG Check for Price Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC, TO220-2-1, 2 PIN IDH20G120C5XKSA1 vs IDH20G120C5

IDH20G120C5XKSA1 Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling capabilities at high temperatures.

  • A non-inverting gate drive circuit with a gate resistor (Rg) between 10-20 ohms and a gate-source voltage (Vgs) of 10-15V is recommended. A gate driver IC like the Infineon 1EDF7131 can also be used.

  • Use a TVS diode or a zener diode for overvoltage protection. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

  • A dead time of 100-200 ns is recommended to ensure proper switching and to prevent shoot-through currents.

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