Part Details for IGB30N60H3ATMA1 by Infineon Technologies AG
Overview of IGB30N60H3ATMA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IGB30N60H3ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
49AC0265
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Newark | Igbt, 600V, 60A, 175Deg C, 187W, Continuous Collector Current:60A, Collector Emitter Saturation Voltage:1.95V, Power Dissipation:187W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IGB30N60H3ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 13 |
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$1.5300 / $1.8100 | Buy Now |
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DISTI #
86AK5141
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Newark | Igbt, Single, 600V, 60A, To-263 Rohs Compliant: Yes |Infineon IGB30N60H3ATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.3300 / $1.4200 | Buy Now |
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DISTI #
IGB30N60H3ATMA1CT-ND
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DigiKey | IGBT TRENCH FS 600V 60A TO263-3 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1288 In Stock |
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$1.2383 / $3.7300 | Buy Now |
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DISTI #
49AC0265
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Avnet Americas | Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263 - Product that comes on tape, but is not reeled (Alt: 49AC0265) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 13 Partner Stock |
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$2.0300 / $3.0700 | Buy Now |
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DISTI #
IGB30N60H3ATMA1
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Avnet Americas | Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IGB30N60H3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
71239316
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Verical | Trans IGBT Chip N-CH 600V 60A 187W 3-Pin(2+Tab) D2PAK T/R Min Qty: 9 Package Multiple: 1 Date Code: 2322 | Americas - 370 |
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$1.7625 / $3.7625 | Buy Now |
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DISTI #
IGB30N60H3
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TME | Transistor: IGBT, 600V, 30A, 187W, D2PAK Min Qty: 1 | 0 |
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$2.1800 / $2.6700 | RFQ |
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DISTI #
C1S322001059394
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Chip1Stop | IGBT discrete RoHS: Compliant Container: Cut Tape | 370 |
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$1.4100 / $3.0100 | Buy Now |
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DISTI #
SP000852240
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EBV Elektronik | Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263 (Alt: SP000852240) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days | EBV - 1000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 1000 | 1000 |
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$2.3100 | Buy Now |
Part Details for IGB30N60H3ATMA1
IGB30N60H3ATMA1 CAD Models
IGB30N60H3ATMA1 Part Data Attributes
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IGB30N60H3ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IGB30N60H3ATMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 262 ns | |
| Turn-on Time-Nom (ton) | 40 ns |
Alternate Parts for IGB30N60H3ATMA1
This table gives cross-reference parts and alternative options found for IGB30N60H3ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGB30N60H3ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT30GN60BG | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247AD | Microchip Technology Inc | IGB30N60H3ATMA1 vs APT30GN60BG |