Part Details for IGC11T120T8LX1SA1 by Infineon Technologies AG
Overview of IGC11T120T8LX1SA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Price & Stock for IGC11T120T8LX1SA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IGC11T120T8LX1SA1-ND
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DigiKey | IGBT 1200V 8A SAWN ON FOIL Lead time: 20 Weeks Container: Bulk | Limited Supply - Call |
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Buy Now | |
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DISTI #
IGC11T120T8LX1SA1
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Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC11T120T8LX1SA1) RoHS: Compliant Min Qty: 22392 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack | 0 |
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$1.4909 / $1.7038 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 22392 Package Multiple: 1 | 0 |
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$1.5000 | Buy Now |
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DISTI #
IGC11T120T8LX1SA1
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Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC11T120T8LX1SA1) RoHS: Compliant Min Qty: 22392 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack | 0 |
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$1.4909 / $1.7038 | Buy Now |
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DISTI #
SP000945352
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EBV Elektronik | IGBT CHIPS (Alt: SP000945352) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IGC11T120T8LX1SA1
IGC11T120T8LX1SA1 CAD Models
IGC11T120T8LX1SA1 Part Data Attributes:
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IGC11T120T8LX1SA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IGC11T120T8LX1SA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | UNCASED CHIP, R-XUUC-N2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.3 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUUC-N2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.07 V |
Alternate Parts for IGC11T120T8LX1SA1
This table gives cross-reference parts and alternative options found for IGC11T120T8LX1SA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGC11T120T8LX1SA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IGC11T120T8LX1SA2 | Insulated Gate Bipolar Transistor | Infineon Technologies AG | IGC11T120T8LX1SA1 vs IGC11T120T8LX1SA2 |
| IGC11T120T8L | Insulated Gate Bipolar Transistor | Infineon Technologies AG | IGC11T120T8LX1SA1 vs IGC11T120T8L |