Part Details for IGC27T120T8LX1SA2 by Infineon Technologies AG
Overview of IGC27T120T8LX1SA2 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IGC27T120T8LX1SA2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IGC27T120T8LX1SA2-ND
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DigiKey | IGBT 1200V 25A DIE Lead time: 20 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
DISTI #
IGC27T120T8LX1SA2
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Avnet Americas | IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC27T120T8LX1SA2) RoHS: Compliant Min Qty: 8955 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack | 0 |
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RFQ | |
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Future Electronics | 1200 V power IGBT chip * MOQ=4478 CpW=896 Delivered qty. can differ +/-20% RoHS: Compliant pbFree: Yes Min Qty: 4478 Package Multiple: 896 Lead time: 20 Weeks Container: Die | 0Die |
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$3.4600 | Buy Now |
DISTI #
SP000945444
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EBV Elektronik | (Alt: SP000945444) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IGC27T120T8LX1SA2
IGC27T120T8LX1SA2 CAD Models
IGC27T120T8LX1SA2 Part Data Attributes
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IGC27T120T8LX1SA2
Infineon Technologies AG
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Datasheet
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IGC27T120T8LX1SA2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | UNCASED CHIP, R-XUUC-N2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 6.3 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUUC-N2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 2.07 V |