-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
726-IGP30N60H3
|
Mouser Electronics | IGBT Transistors 600V 30A 187W RoHS: Compliant | 327 |
|
$1.2900 / $2.9800 | Buy Now |
|
Bristol Electronics | Min Qty: 2 | 50 |
|
$1.8750 / $3.0000 | Buy Now |
|
Quest Components | 40 |
|
$1.5000 / $4.0000 | Buy Now | |
DISTI #
IGP30N60H3
|
TME | Transistor: IGBT, 600V, 30A, 187W, TO220-3, H3 Min Qty: 1 | 353 |
|
$1.9900 / $3.5600 | Buy Now |
|
Chips Pulse Industry Limited | PG-TO220-3 IGBTs RoHS Purchase Online, Ship Immediately | 80 |
|
$1.4745 / $1.8223 | Buy Now |
|
LCSC | 187W 60A 600V FS(Field Stop) TO-220 IGBTs ROHS | 67 |
|
$1.6383 / $2.6201 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IGP30N60H3
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IGP30N60H3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 5.7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 187 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 262 ns | |
Turn-on Time-Nom (ton) | 40 ns |
This table gives cross-reference parts and alternative options found for IGP30N60H3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGP30N60H3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IGP30N60H3XKSA1 | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IGP30N60H3 vs IGP30N60H3XKSA1 |