Datasheets
IGP30N60H3 by:

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3

Part Details for IGP30N60H3 by Infineon Technologies AG

Overview of IGP30N60H3 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IGP30N60H3

Part # Distributor Description Stock Price Buy
DISTI # 726-IGP30N60H3
Mouser Electronics IGBT Transistors 600V 30A 187W RoHS: Compliant 327
  • 1 $2.9800
  • 10 $2.4000
  • 100 $1.9700
  • 250 $1.9500
  • 500 $1.6500
  • 1,000 $1.3400
  • 5,000 $1.2900
$1.2900 / $2.9800 Buy Now
Bristol Electronics   Min Qty: 2 50
  • 2 $3.0000
  • 8 $2.2500
  • 24 $1.8750
$1.8750 / $3.0000 Buy Now
Quest Components   40
  • 1 $4.0000
  • 9 $2.5000
  • 31 $1.5000
$1.5000 / $4.0000 Buy Now
DISTI # IGP30N60H3
TME Transistor: IGBT, 600V, 30A, 187W, TO220-3, H3 Min Qty: 1 353
  • 1 $3.5600
  • 3 $2.9800
  • 10 $2.6800
  • 50 $2.4900
  • 100 $2.3700
  • 250 $2.1400
  • 500 $1.9900
$1.9900 / $3.5600 Buy Now
Chips Pulse Industry Limited PG-TO220-3 IGBTs RoHS Purchase Online, Ship Immediately 80
  • 50 $1.8223
  • 100 $1.6115
  • 500 $1.5161
  • 1,000 $1.4745
$1.4745 / $1.8223 Buy Now
LCSC 187W 60A 600V FS(Field Stop) TO-220 IGBTs ROHS 67
  • 1 $2.6201
  • 10 $2.2531
  • 50 $2.0248
  • 100 $1.7905
  • 500 $1.6846
  • 1,000 $1.6383
$1.6383 / $2.6201 Buy Now

Part Details for IGP30N60H3

IGP30N60H3 CAD Models

IGP30N60H3 Part Data Attributes

IGP30N60H3 Infineon Technologies AG
Buy Now Datasheet
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IGP30N60H3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 5.7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 187 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 262 ns
Turn-on Time-Nom (ton) 40 ns

Alternate Parts for IGP30N60H3

This table gives cross-reference parts and alternative options found for IGP30N60H3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGP30N60H3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IGP30N60H3XKSA1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IGP30N60H3 vs IGP30N60H3XKSA1
Part Number Description Manufacturer Compare
IGP30N60H3XKSA1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IGP30N60H3 vs IGP30N60H3XKSA1

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