IGT60R190D1SATMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor,

Overview of IGT60R190D1SATMA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 5 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for IGT60R190D1SATMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 84AC1772
Newark Mosfet, N-Ch, 600V, 12.5A, 55.5W, Transistor Polarity:N Channel, Continuous Drain Current Id:12.5A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.14Ohm, Rds(On) Test Voltage Vgs:-, Threshold Voltage Vgs:1.2V, Power Rohs Compliant: Yes |Infineon IGT60R190D1SATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $13.3400
  • 10 $12.2700
$12.2700 / $13.3400 Buy Now
DISTI # IGT60R190D1SATMA1
Avnet Americas Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R - Tape and Reel (Alt: IGT60R190D1SATMA1) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ
DISTI # IGT60R190D1SATMA1
TME Transistor: N-JFET, CoolGaN™, unipolar, HEMT, 600V, 12.5A, Idm: 23A Min Qty: 1 7
  • 1 $11.6100
  • 3 $10.4100
  • 10 $9.7000
$9.7000 / $11.6100 Buy Now
DISTI # C1S322000726569
Chip1Stop Gallium nitride CoolGaN™ 600V e-mode power transistor 1
  • 1 $8.2100
$8.2100 Buy Now
DISTI # SP001701702
EBV Elektronik Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R (Alt: SP001701702) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for IGT60R190D1SATMA1 by Infineon Technologies AG
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Part Data Attributes for IGT60R190D1SATMA1 by Infineon Technologies AG

IGT60R190D1SATMA1
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
12.5 A
Drain-source On Resistance-Max
0.19 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
0.15 pF
JESD-30 Code
R-PSSO-F3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
55.5 W
Pulsed Drain Current-Max (IDM)
23 A
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
GALLIUM NITRIDE
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