There are no models available for this part yet.
Overview of IGT60R190D1SATMA1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 5 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for IGT60R190D1SATMA1 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
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DISTI #
84AC1772
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Newark | Mosfet, N-Ch, 600V, 12.5A, 55.5W, Transistor Polarity:N Channel, Continuous Drain Current Id:12.5A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.14Ohm, Rds(On) Test Voltage Vgs:-, Threshold Voltage Vgs:1.2V, Power Rohs Compliant: Yes |Infineon IGT60R190D1SATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$12.2700 / $13.3400 | Buy Now | |
DISTI #
IGT60R190D1SATMA1
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Avnet Americas | Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R - Tape and Reel (Alt: IGT60R190D1SATMA1) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0 |
|
RFQ | ||
DISTI #
IGT60R190D1SATMA1
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TME | Transistor: N-JFET, CoolGaN™, unipolar, HEMT, 600V, 12.5A, Idm: 23A Min Qty: 1 | 7 |
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$9.7000 / $11.6100 | Buy Now | |
DISTI #
C1S322000726569
|
Chip1Stop | Gallium nitride CoolGaN™ 600V e-mode power transistor | 1 |
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$8.2100 | Buy Now | |
DISTI #
SP001701702
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EBV Elektronik | Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R (Alt: SP001701702) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
CAD Models for IGT60R190D1SATMA1 by Infineon Technologies AG
Part Data Attributes for IGT60R190D1SATMA1 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
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Samacsys Manufacturer
|
Infineon
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Case Connection
|
DRAIN
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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600 V
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Drain Current-Max (ID)
|
12.5 A
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Drain-source On Resistance-Max
|
0.19 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
|
0.15 pF
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JESD-30 Code
|
R-PSSO-F3
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Moisture Sensitivity Level
|
1
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Number of Elements
|
1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
|
SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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55.5 W
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Pulsed Drain Current-Max (IDM)
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23 A
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Surface Mount
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YES
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Terminal Form
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FLAT
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Terminal Position
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SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
GALLIUM NITRIDE
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