Part Details for IGW100N60H3 by Infineon Technologies AG
Overview of IGW100N60H3 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IGW100N60H3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IGW100N60H3
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Mouser Electronics | IGBT Transistors IGBT PRODUCTS TrenchStop RoHS: Compliant | 67 |
|
$4.5900 / $8.6400 | Buy Now |
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DISTI #
IGW100N60H3
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TME | Transistor: IGBT, 600V, 100A, 714W, TO247-3, H3 Min Qty: 1 | 0 |
|
$8.3900 / $11.3500 | RFQ |
Part Details for IGW100N60H3
IGW100N60H3 CAD Models
IGW100N60H3 Part Data Attributes:
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IGW100N60H3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IGW100N60H3
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 140 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 714 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 333 ns | |
| Turn-on Time-Nom (ton) | 72 ns | |
| VCEsat-Max | 2.3 V |
Alternate Parts for IGW100N60H3
This table gives cross-reference parts and alternative options found for IGW100N60H3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGW100N60H3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT80GA60B | Insulated Gate Bipolar Transistor, 143A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Microsemi Corporation | IGW100N60H3 vs APT80GA60B |
| APT80GA60B | Insulated Gate Bipolar Transistor, 143A I(C), 600V V(BR)CES, N-Channel, TO-247AD | Microchip Technology Inc | IGW100N60H3 vs APT80GA60B |
| APT80GA60S | Insulated Gate Bipolar Transistor, 143A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3PAK-3 | Microsemi Corporation | IGW100N60H3 vs APT80GA60S |