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Part Details for IGW40N65H5 by Infineon Technologies AG
Overview of IGW40N65H5 by Infineon Technologies AG
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IGW40N65H5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IGW40N65H5-ES
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Mouser Electronics | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS: Compliant | 330 |
|
$1.7700 / $3.6600 | Buy Now |
|
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CHIPMALL.COM LIMITED | IGBT 650V 74A 255W PG-TO247-3 | 230 |
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$2.3279 | Buy Now |
|
|
Chips Pulse Industry Limited | PG-TO247-3 Pre-ordered transistors RoHS Purchase Online, Ship Immediately | 276 |
|
$2.1379 / $2.2721 | Buy Now |
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LCSC | TO-247-3 IGBTs ROHS | 230 |
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$2.3754 / $2.5246 | Buy Now |
|
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Perfect Parts Corporation | 736 |
|
RFQ | ||
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Wuhan P&S | 650V,74A,IGBT Min Qty: 1 | 57 |
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$1.8200 / $2.5400 | Buy Now |
Part Details for IGW40N65H5
IGW40N65H5 CAD Models
IGW40N65H5 Part Data Attributes
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IGW40N65H5
Infineon Technologies AG
Buy Now
Datasheet
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IGW40N65H5
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 74 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 4.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 178 ns | |
| Turn-on Time-Nom (ton) | 34 ns | |
| VCEsat-Max | 2.1 V |