Datasheets
IGW50N60TPXKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN

Part Details for IGW50N60TPXKSA1 by Infineon Technologies AG

Overview of IGW50N60TPXKSA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for IGW50N60TPXKSA1

Part # Distributor Description Stock Price Buy
DISTI # IGW50N60TPXKSA1-ND
DigiKey IGBT TRENCH/FS 600V 80A TO247-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube 188
In Stock
  • 1 $4.0500
  • 30 $2.2310
  • 120 $1.8287
  • 510 $1.5328
  • 1,020 $1.4247
  • 2,010 $1.3849
$1.3849 / $4.0500 Buy Now
DISTI # IGW50N60TPXKSA1
Avnet Americas Trans IGBT Chip N-CH 600V 80A 3 TO-247 Tube - Rail/Tube (Alt: IGW50N60TPXKSA1) RoHS: Compliant Min Qty: 300 Package Multiple: 30 Lead time: 19 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 726-IGW50N60TPXKSA1
Mouser Electronics IGBTs Y RoHS: Compliant 64
  • 1 $2.0800
  • 25 $1.6600
  • 100 $1.4200
  • 240 $1.4100
  • 480 $1.3800
  • 5,040 $1.3500
$1.3500 / $2.0800 Buy Now
Future Electronics IGW50N60TP Series 600 V 80 A Through Hole IGBT TrenchStop™ - PG-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks Container: Tube 0
Tube
  • 30 $1.2300
  • 480 $1.2100
  • 960 $1.1900
  • 1,200 $1.1900
  • 3,600 $1.1500
$1.1500 / $1.2300 Buy Now
DISTI # C1S322000653272
Chip1Stop Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant pbFree: Yes 100
  • 1 $3.2700
  • 10 $2.2600
  • 50 $1.9000
  • 100 $1.3700
$1.3700 / $3.2700 Buy Now
DISTI # SP001379668
EBV Elektronik Trans IGBT Chip N-CH 600V 80A 3 TO-247 Tube (Alt: SP001379668) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IGW50N60TPXKSA1

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IGW50N60TPXKSA1 Part Data Attributes

IGW50N60TPXKSA1 Infineon Technologies AG
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IGW50N60TPXKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Additional Feature FAST SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 396 ns
Turn-on Time-Nom (ton) 60 ns

Alternate Parts for IGW50N60TPXKSA1

This table gives cross-reference parts and alternative options found for IGW50N60TPXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGW50N60TPXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IGW50N60TP Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N60TPXKSA1 vs IGW50N60TP
Part Number Description Manufacturer Compare
IRGB30B60KPBF Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IGW50N60TPXKSA1 vs IRGB30B60KPBF
IGW50N60TP Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N60TPXKSA1 vs IGW50N60TP
IRGB30B60K Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IGW50N60TPXKSA1 vs IRGB30B60K

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