Part Details for IGW50N65F5AXKSA1 by Infineon Technologies AG
Overview of IGW50N65F5AXKSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for IGW50N65F5AXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IGW50N65 - Automotive IGBT Discretes ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2773 |
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$2.9100 / $3.4200 | Buy Now |
Part Details for IGW50N65F5AXKSA1
IGW50N65F5AXKSA1 CAD Models
IGW50N65F5AXKSA1 Part Data Attributes
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IGW50N65F5AXKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IGW50N65F5AXKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 4.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 270 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 196 ns | |
| Turn-on Time-Nom (ton) | 35 ns | |
| VCEsat-Max | 2.1 V |
Alternate Parts for IGW50N65F5AXKSA1
This table gives cross-reference parts and alternative options found for IGW50N65F5AXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGW50N65F5AXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IGW50N65F5 | Insulated Gate Bipolar Transistor, | Infineon Technologies AG | IGW50N65F5AXKSA1 vs IGW50N65F5 |
| AIGW50N65F5XKSA1 | Insulated Gate Bipolar Transistor, | Infineon Technologies AG | IGW50N65F5AXKSA1 vs AIGW50N65F5XKSA1 |
| AIGW50N65F5 | Insulated Gate Bipolar Transistor, | Infineon Technologies AG | IGW50N65F5AXKSA1 vs AIGW50N65F5 |