Datasheets
IGW50N65H5FKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for IGW50N65H5FKSA1 by Infineon Technologies AG

Overview of IGW50N65H5FKSA1 by Infineon Technologies AG

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Applications Industrial Automation

Price & Stock for IGW50N65H5FKSA1

Part # Distributor Description Stock Price Buy
DISTI # IGW50N65H5FKSA1
Avnet Americas Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65H5FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks, 0 Days Container: Tube 300
RFQ
DISTI # IGW50N65H5FKSA1
Avnet Americas Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65H5FKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 112 Partner Stock
RFQ
DISTI # 726-IGW50N65H5FKSA1
Mouser Electronics IGBTs IGBT PRODUCTS RoHS: Compliant 156
  • 1 $4.1300
  • 25 $3.2700
  • 100 $2.8000
  • 240 $2.1800
  • 480 $2.1700
  • 1,200 $2.1400
  • 2,640 $2.1300
$2.1300 / $4.1300 Buy Now
Future Electronics IGW50N65H5 Series 650 V 80 A Through Hole TRENCHSTOPTM 5 Gen IGBT - TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks Container: Tube 0
Tube
  • 30 $2.0600
  • 480 $2.0300
  • 720 $2.0100
  • 960 $1.9900
  • 1,200 $1.9500
$1.9500 / $2.0600 Buy Now
Future Electronics IGW50N65H5 Series 650 V 80 A Through Hole TRENCHSTOPTM 5 Gen IGBT - TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks Container: Tube 0
Tube
  • 30 $2.0600
  • 480 $2.0300
  • 720 $2.0100
  • 960 $1.9900
  • 1,200 $1.9500
$1.9500 / $2.0600 Buy Now
DISTI # 71239379
Verical Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 7 Package Multiple: 1 Date Code: 2337 Americas - 225
  • 7 $4.9500
  • 10 $4.3250
  • 50 $3.6000
  • 100 $3.1500
  • 200 $2.9500
$2.9500 / $4.9500 Buy Now
DISTI # 76894165
Verical Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2401 Americas - 196
  • 3 $3.5739
  • 25 $2.9484
  • 100 $2.5746
  • 240 $2.0751
  • 480 $2.0505
  • 1,200 $2.0147
  • 2,640 $1.9829
$1.9829 / $3.5739 Buy Now
Rochester Electronics IGW50N65 - Discrete IGBT without Anti-Parallel Diode ' RoHS: Compliant Status: Active Min Qty: 1 112
  • 1 $2.2000
  • 25 $2.1600
  • 100 $2.0700
  • 500 $1.9800
  • 1,000 $1.8700
$1.8700 / $2.2000 Buy Now
DISTI # IGW50N65H5FKSA1
TME Transistor: IGBT, 650V, 50A, 305W, TO247-3 Min Qty: 1 0
  • 1 $4.5000
  • 10 $3.7200
  • 30 $3.3900
  • 90 $3.3600
$3.3600 / $4.5000 RFQ
DISTI # C1S322001059631
Chip1Stop IGBT discrete RoHS: Compliant pbFree: Yes Container: Tube 225
  • 1 $3.9600
  • 10 $3.4600
  • 50 $2.8800
  • 100 $2.5200
  • 200 $2.3600
$2.3600 / $3.9600 Buy Now
DISTI # C1S322000329597
Chip1Stop Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant pbFree: Yes 198
  • 1 $4.6200
  • 10 $3.8500
  • 25 $3.2400
  • 50 $2.3300
$2.3300 / $4.6200 Buy Now
DISTI # SP001001744
EBV Elektronik Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP001001744) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics IGBT 650V 80A 305W PG-TO247-3 / Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube 10600
  • 5 $11.3050
  • 11 $9.2760
  • 17 $8.9860
  • 23 $8.6960
  • 30 $8.4060
  • 40 $7.5370
$7.5370 / $11.3050 Buy Now

Part Details for IGW50N65H5FKSA1

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IGW50N65H5FKSA1 Part Data Attributes

IGW50N65H5FKSA1 Infineon Technologies AG
Buy Now Datasheet
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IGW50N65H5FKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 4.8 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 305 W
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 231 ns
Turn-on Time-Nom (ton) 35 ns
VCEsat-Max 2.1 V

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