Part Details for IHW20N135R3FKSA1 by Infineon Technologies AG
Overview of IHW20N135R3FKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IHW20N135R3FKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IHW20N135R3FKSA1
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Avnet Americas | Transistor IGBT N-CH 1350V 40A 3-Pin TO-247 - Rail/Tube (Alt: IHW20N135R3FKSA1) RoHS: Compliant Min Qty: 159 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 13054 Partner Stock |
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$1.8700 / $2.3000 | Buy Now |
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Rochester Electronics | IHW20N135 - Discrete IGBT with Anti-Parallel Diode RoHS: Compliant Status: Obsolete Min Qty: 1 | 3 |
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$1.9600 / $2.3000 | Buy Now |
Part Details for IHW20N135R3FKSA1
IHW20N135R3FKSA1 CAD Models
IHW20N135R3FKSA1 Part Data Attributes
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IHW20N135R3FKSA1
Infineon Technologies AG
Buy Now
Datasheet
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IHW20N135R3FKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247 | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 40 A | |
Collector-Emitter Voltage-Max | 1350 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 25 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 310 W | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 385 ns | |
Turn-on Time-Nom (ton) | 505 ns |