Part Details for IHW20T120 by Infineon Technologies AG
Overview of IHW20T120 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Part Details for IHW20T120
IHW20T120 CAD Models
IHW20T120 Part Data Attributes
|
|
IHW20T120
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IHW20T120
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 178 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 790 ns | |
| Turn-on Time-Nom (ton) | 82 ns |
Alternate Parts for IHW20T120
This table gives cross-reference parts and alternative options found for IHW20T120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IHW20T120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTP20N60C3R | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | IHW20T120 vs HGTP20N60C3R |
| SGW6N60UFD | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 | Samsung Semiconductor | IHW20T120 vs SGW6N60UFD |
| SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | IHW20T120 vs SGP5N60RUFD |
| HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | IHW20T120 vs HGT1S12N60B3S9A |
| HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | IHW20T120 vs HGT1S3N60B3S |
| APT45GL100BN | 45A, 1000V, N-CHANNEL IGBT, TO-247 | Microsemi Corporation | IHW20T120 vs APT45GL100BN |
| IXDA20N120AS | Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | IXYS Corporation | IHW20T120 vs IXDA20N120AS |
| SGW15N120 | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | IHW20T120 vs SGW15N120 |
| HGTG18N120BN_NL | Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | IHW20T120 vs HGTG18N120BN_NL |
| IXSH30N60B | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IHW20T120 vs IXSH30N60B |