Datasheets
IKA08N65H5XKSA1 by:

Insulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel,

Part Details for IKA08N65H5XKSA1 by Infineon Technologies AG

Overview of IKA08N65H5XKSA1 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Price & Stock for IKA08N65H5XKSA1

Part # Distributor Description Stock Price Buy
DISTI # IKA08N65H5XKSA1-ND
DigiKey IGBT 650V 10.8A TO220-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube 495
In Stock
  • 1 $1.4600
  • 50 $1.1722
  • 100 $0.9644
  • 500 $0.8708
$0.8708 / $1.4600 Buy Now
DISTI # IKA08N65H5XKSA1
Avnet Americas Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKA08N65H5XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 500 $1.0797
$1.0797 Buy Now
DISTI # 726-IKA08N65H5XKSA1
Mouser Electronics IGBT Transistors IGBT PRODUCTS RoHS: Compliant 0
  • 1 $2.0800
  • 10 $1.6700
  • 100 $1.3700
  • 250 $1.3600
  • 500 $1.1300
  • 1,000 $0.9350
  • 5,000 $0.9000
$0.9000 / $2.0800 Order Now
Future Electronics IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 19 Weeks Container: Tube 0
Tube
  • 10 $1.1500
  • 50 $1.0900
  • 250 $1.0300
  • 1,000 $0.9800
  • 2,500 $0.9150
$0.9150 / $1.1500 Buy Now
Rochester Electronics IKA08N65 - Discrete IGBT with Anti-Parallel Diode RoHS: Compliant Status: Active Min Qty: 1 1360
  • 1 $1.0200
  • 25 $0.9956
  • 100 $0.9549
  • 500 $0.9143
  • 1,000 $0.8635
$0.8635 / $1.0200 Buy Now
DISTI # SP001001722
EBV Elektronik Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube (Alt: SP001001722) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IKA08N65H5XKSA1

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IKA08N65H5XKSA1 Part Data Attributes

IKA08N65H5XKSA1 Infineon Technologies AG
Buy Now Datasheet
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IKA08N65H5XKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 10.8 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 4.8 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 31.2 W
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 130 ns
Turn-on Time-Nom (ton) 16 ns
VCEsat-Max 2.1 V

Alternate Parts for IKA08N65H5XKSA1

This table gives cross-reference parts and alternative options found for IKA08N65H5XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKA08N65H5XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4IBC20UDPBF Insulated Gate Bipolar Transistor, 11.4A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 Infineon Technologies AG IKA08N65H5XKSA1 vs IRG4IBC20UDPBF
Part Number Description Manufacturer Compare
HGTP20N60C3R Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor IKA08N65H5XKSA1 vs HGTP20N60C3R
SGW6N60UFD Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 Samsung Semiconductor IKA08N65H5XKSA1 vs SGW6N60UFD
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IKA08N65H5XKSA1 vs SGP5N60RUFD
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IKA08N65H5XKSA1 vs HGT1S12N60B3S9A
HGT1S3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation IKA08N65H5XKSA1 vs HGT1S3N60B3S
APT45GL100BN 45A, 1000V, N-CHANNEL IGBT, TO-247 Microsemi Corporation IKA08N65H5XKSA1 vs APT45GL100BN
IXDA20N120AS Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 IXYS Corporation IKA08N65H5XKSA1 vs IXDA20N120AS
SGW15N120 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG IKA08N65H5XKSA1 vs SGW15N120
HGTG18N120BN_NL Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation IKA08N65H5XKSA1 vs HGTG18N120BN_NL
IXSH30N60B Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IKA08N65H5XKSA1 vs IXSH30N60B

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