Datasheets
IKB40N65EF5ATMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-263AB, TO-263, 3/2 PIN

Part Details for IKB40N65EF5ATMA1 by Infineon Technologies AG

Overview of IKB40N65EF5ATMA1 by Infineon Technologies AG

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Applications Industrial Automation

Price & Stock for IKB40N65EF5ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 62AC6979
Newark Igbt, Single, 600V, 74A, To-263, Dc Collector Current:74A, Collector Emitter Saturation Voltage Vce(On):1.6V, Power Dissipation Pd:250W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Style:To-263, No. Of Pins:3Pins, Rohs Compliant: Yes |Infineon IKB40N65EF5ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 786
  • 1 $4.9400
  • 10 $4.2100
  • 25 $3.9700
  • 50 $3.7300
  • 100 $3.4900
  • 250 $3.3100
  • 500 $3.1500
$3.1500 / $4.9400 Buy Now
DISTI # IKB40N65EF5ATMA1CT-ND
DigiKey IGBT TRENCH FS 650V 74A TO263-3 Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1696
In Stock
  • 1 $5.3700
  • 10 $3.5790
  • 100 $2.5616
  • 500 $2.1265
  • 1,000 $2.0251
$2.0251 / $5.3700 Buy Now
DISTI # IKB40N65EF5ATMA1
Avnet Americas Transistor IGBT N-CH 650V 74A 3-Pin TO-263 T/R - Tape and Reel (Alt: IKB40N65EF5ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-IKB40N65EF5ATMA1
Mouser Electronics IGBTs N RoHS: Compliant 2181
  • 1 $4.3000
  • 10 $3.6200
  • 25 $3.6000
  • 100 $2.5900
  • 250 $2.4800
  • 500 $2.1500
  • 1,000 $2.0200
$2.0200 / $4.3000 Buy Now
DISTI # 75724075
Verical Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(2+Tab) D2PAK T/R Min Qty: 10 Package Multiple: 1 Date Code: 2332 Americas - 935
  • 10 $3.1625
  • 50 $3.1375
  • 100 $2.9500
  • 500 $2.9375
$2.9375 / $3.1625 Buy Now
DISTI # 70815536
Verical Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(2+Tab) D2PAK T/R Min Qty: 3 Package Multiple: 1 Date Code: 2332 Americas - 420
  • 3 $3.0060
  • 10 $2.7510
  • 25 $2.7330
  • 100 $2.2700
  • 250 $2.0780
$2.0780 / $3.0060 Buy Now
DISTI # IKB40N65EF5ATMA1
TME Transistor: IGBT, 650V, 46A, 125W, D2PAK Min Qty: 1 0
  • 1 $4.2200
  • 5 $3.8000
  • 25 $3.3600
  • 100 $3.0100
$3.0100 / $4.2200 RFQ
DISTI # C1S322000700206
Chip1Stop IGBT discrete RoHS: Compliant Container: Cut Tape 935
  • 1 $2.7600
  • 10 $2.5300
  • 50 $2.5100
  • 100 $2.4000
  • 500 $2.3900
$2.3900 / $2.7600 Buy Now
DISTI # SP001509612
EBV Elektronik Transistor IGBT N-CH 650V 74A 3-Pin TO-263 T/R (Alt: SP001509612) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IKB40N65EF5ATMA1

IKB40N65EF5ATMA1 CAD Models

IKB40N65EF5ATMA1 Part Data Attributes

IKB40N65EF5ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IKB40N65EF5ATMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-263AB, TO-263, 3/2 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-263, 3/2 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 74 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 199 ns
Turn-on Time-Nom (ton) 57 ns

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