Part Details for IKD06N60RATMA1 by Infineon Technologies AG
Overview of IKD06N60RATMA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IKD06N60RATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IKD06N60RATMA1CT-ND
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DigiKey | IGBT TRENCH FS 600V 12A TO252-3 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2500 In Stock |
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$0.4049 / $1.0800 | Buy Now |
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DISTI #
IKD06N60RATMA1
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Avnet Americas | Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD06N60RATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days Container: Reel | 0 |
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$0.5011 | Buy Now |
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DISTI #
726-IKD06N60RATMA1
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Mouser Electronics | IGBT Transistors IGBT w/ INTG DIODE 600V 12A RoHS: Compliant | 0 |
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$0.4460 / $1.0800 | Order Now |
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Rochester Electronics | IKD06N60 - Discrete IGBT with Anti-Parallel Diode ' RoHS: Compliant Status: Active Min Qty: 1 | 4521 |
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$0.4008 / $0.4715 | Buy Now |
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DISTI #
IKD06N60RATMA1
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Avnet Americas | Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD06N60RATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days Container: Reel | 0 |
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$0.5011 | Buy Now |
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DISTI #
IKD06N60RATMA1
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TME | Transistor: IGBT, TRENCHSTOP™ RC, 600V, 6A, 100W, DPAK Min Qty: 1 | 1213 |
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$0.5480 / $0.8380 | Buy Now |
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Chip1Cloud | IGBT 600V 12A 100W TO252 / Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3-Pin(2+Tab) DPAK T/R | 6000 |
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RFQ | |
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CHIPMALL.COM LIMITED | The RC-Drives 600 V , 6 A hard-switching TRENCHSTOP IGBT3 with integrated reverse conducting diode in a TO-252-3 package has been developed as a cost optimized solution for sensitive consumer drives market. | 448 |
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$0.6623 | Buy Now |
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DISTI #
SP000964628
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EBV Elektronik | Trans IGBT Chip N-CH 600V 12A 3-Pin TO-252 T/R (Alt: SP000964628) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 3 Weeks, 2 Days | EBV - 0 |
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Buy Now | |
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DISTI #
1832340
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element14 Asia-Pacific | IGBT+ DIODE,600V,4A,TO252 RoHS: Compliant Min Qty: 1 Container: Each | 1260 |
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$0.4841 / $1.2270 | Buy Now |
Part Details for IKD06N60RATMA1
IKD06N60RATMA1 CAD Models
IKD06N60RATMA1 Part Data Attributes:
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IKD06N60RATMA1
Infineon Technologies AG
Buy Now
Datasheet
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IKD06N60RATMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-252, GREEN, PLASTIC, DPAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | GREEN, PLASTIC, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 12 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 5.7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 335 ns | |
| Turn-on Time-Nom (ton) | 22 ns |