Part Details for IKP08N65H5XKSA1 by Infineon Technologies AG
Overview of IKP08N65H5XKSA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IKP08N65H5XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
33X0408
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Newark | Igbt Single Transistor, 8 A, 1.65 V, 70 W, 650 V, To-220, 3 Rohs Compliant: Yes |Infineon IKP08N65H5XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 396 |
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$0.9580 / $2.2000 | Buy Now |
|
DISTI #
IKP08N65H5XKSA1-ND
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DigiKey | IGBT 650V 18A TO220-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube | Temporarily Out of Stock |
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$0.8906 / $2.1200 | Buy Now |
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DISTI #
IKP08N65H5XKSA1
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Avnet Americas | Trans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKP08N65H5XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 19 Weeks, 0 Days Container: Tube | 0 |
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$1.1044 | Buy Now |
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DISTI #
726-IKP08N65H5XKSA1
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Mouser Electronics | IGBT Transistors IGBT PRODUCTS RoHS: Compliant | 500 |
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$0.9210 / $2.1700 | Buy Now |
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Future Electronics | 650V DuoPack IGBT and Diode High speed switching series fifth generation RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Tube | 0Tube |
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$0.9900 | Buy Now |
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DISTI #
IKP08N65H5
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TME | Transistor: IGBT, 650V, 18A, 70W, TO220-3, H5 Min Qty: 1 | 0 |
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$1.3500 / $2.0300 | RFQ |
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Ameya Holding Limited | Transistor: IGBT, 650V, 18A, 70W, TO220-3, H5 | 250 |
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RFQ |
Part Details for IKP08N65H5XKSA1
IKP08N65H5XKSA1 CAD Models
IKP08N65H5XKSA1 Part Data Attributes:
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IKP08N65H5XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKP08N65H5XKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 18 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 4.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 130 ns | |
| Turn-on Time-Nom (ton) | 16 ns | |
| VCEsat-Max | 2.1 V |