Part Details for IKQ50N120CH3 by Infineon Technologies AG
Overview of IKQ50N120CH3 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IKQ50N120CH3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IKQ50N120CH3
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TME | Transistor: IGBT, 1.2kV, 50A, 173W, TO247-3, H3 Min Qty: 1 | 0 |
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$13.8600 / $17.5100 | RFQ |
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Chip1Cloud | Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode | 6800 |
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RFQ | |
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MacroQuest Electronics | STOCK | 10000 |
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RFQ |
Part Details for IKQ50N120CH3
IKQ50N120CH3 CAD Models
IKQ50N120CH3 Part Data Attributes:
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IKQ50N120CH3
Infineon Technologies AG
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Datasheet
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IKQ50N120CH3
Infineon Technologies AG
IGBT
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-05-10 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 652 W | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 466 ns | |
Turn-on Time-Nom (ton) | 68 ns | |
VCEsat-Max | 2.35 V |