Datasheets
IKW15N120BH6XKSA1 by:

Insulated Gate Bipolar Transistor,

Part Details for IKW15N120BH6XKSA1 by Infineon Technologies AG

Overview of IKW15N120BH6XKSA1 by Infineon Technologies AG

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Applications Automotive

Price & Stock for IKW15N120BH6XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 39AH8885
Newark Igbt, 1.2Kv, 30A, 175Deg C, 200W Rohs Compliant: Yes |Infineon IKW15N120BH6XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 242
  • 1 $3.6400
  • 10 $3.3500
  • 25 $2.9600
  • 50 $2.7700
  • 100 $2.5800
  • 480 $2.5000
  • 720 $2.3200
$2.3200 / $3.6400 Buy Now
DISTI # 448-IKW15N120BH6XKSA1-ND
DigiKey IGBT 1200 V 15A TO247-3-46 Min Qty: 1 Lead time: 22 Weeks Container: Tube Temporarily Out of Stock
  • 1 $3.2100
  • 30 $2.5467
  • 120 $2.1828
  • 510 $1.9403
  • 1,020 $1.6614
  • 2,010 $1.5644
  • 5,010 $1.5009
$1.5009 / $3.2100 Buy Now
DISTI # IKW15N120BH6XKSA1
Avnet Americas Transistor IGBT N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW15N120BH6XKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 240 $1.7792
  • 300 $1.7269
  • 540 $1.6746
  • 1,200 $1.6222
  • 2,400 $1.5699
  • 12,000 $1.5176
  • 24,000 $1.4652
$1.4652 / $1.7792 Buy Now
DISTI # 726-IKW15N120BH6XKSA
Mouser Electronics IGBT Transistors INDUSTRY 14 RoHS: Compliant 374
  • 1 $3.2100
  • 10 $3.1200
  • 25 $2.5500
  • 100 $2.1900
  • 240 $2.1800
  • 480 $1.6600
  • 1,200 $1.5600
  • 2,640 $1.5000
$1.5000 / $3.2100 Buy Now
Future Electronics IGBT Transistors INDUSTRY 14 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $1.5700
  • 480 $1.5500
  • 960 $1.5300
  • 1,200 $1.5200
  • 3,600 $1.4800
$1.4800 / $1.5700 Buy Now
DISTI # 79327610
Verical Trans IGBT Chip N-CH 1200V 30A 200W 3-Pin(3+Tab) TO-247 Tube Min Qty: 240 Package Multiple: 240 Date Code: 2222 Americas - 20160
  • 240 $1.6850
$1.6850 Buy Now
DISTI # 63341254
Verical Trans IGBT Chip N-CH 1200V 30A 200W 3-Pin(3+Tab) TO-247 Tube Min Qty: 12 Package Multiple: 1 Americas - 367
  • 12 $2.6625
  • 50 $2.3125
  • 100 $2.2125
  • 200 $2.2000
$2.2000 / $2.6625 Buy Now
DISTI # IKW15N120BH6XKSA1
Avnet Americas Transistor IGBT N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW15N120BH6XKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 240 $1.7792
  • 300 $1.7269
  • 540 $1.6746
  • 1,200 $1.6222
  • 2,400 $1.5699
  • 12,000 $1.5176
  • 24,000 $1.4652
$1.4652 / $1.7792 Buy Now
DISTI # IKW15N120BH6XKSA1
TME Transistor: IGBT, 1.2kV, 15A, 100W, TO247-3 Min Qty: 1 0
  • 1 $3.7500
  • 3 $3.3100
  • 10 $2.9700
  • 30 $2.7800
$2.7800 / $3.7500 RFQ
Ameya Holding Limited   Min Qty: 2 802
  • 2 $4.1229
  • 8 $4.0005
  • 16 $3.8809
$3.8809 / $4.1229 Buy Now
Chip1Cloud IGBT 1200 V 15A TO247-3-46 2360
RFQ
DISTI # C1S322000719107
Chip1Stop IGBT discrete RoHS: Compliant pbFree: Yes Container: Tube 367
  • 1 $2.7400
  • 10 $2.0900
  • 50 $1.8200
  • 100 $1.7300
  • 200 $1.7200
$1.7200 / $2.7400 Buy Now
DISTI # SP001666618
EBV Elektronik Transistor IGBT N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: SP001666618) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 3 Weeks, 2 Days EBV - 0
Buy Now
DISTI # 3227599
element14 Asia-Pacific IGBT, 1.2KV, 30A, 175DEG C, 200W RoHS: Compliant Min Qty: 1 Container: Each 2
  • 1 $3.3843
  • 10 $2.6913
  • 100 $2.0424
  • 500 $1.8433
  • 1,000 $1.6442
$1.6442 / $3.3843 Buy Now
DISTI # 3227599
Farnell IGBT, 1.2KV, 30A, 175DEG C, 200W RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 242
  • 1 $3.6061
  • 10 $2.5455
  • 100 $1.9341
  • 500 $1.7594
  • 1,000 $1.5847
$1.5847 / $3.6061 Buy Now

Part Details for IKW15N120BH6XKSA1

IKW15N120BH6XKSA1 CAD Models

IKW15N120BH6XKSA1 Part Data Attributes:

IKW15N120BH6XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IKW15N120BH6XKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 30 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.3 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 265 ns
Turn-on Time-Nom (ton) 47 ns
VCEsat-Max 2.3 V

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