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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IKW25N120H3
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Mouser Electronics | IGBT Transistors IGBT PRODUCTS RoHS: Compliant | 1638 |
|
$3.4800 / $6.1600 | Buy Now |
DISTI #
68376179
|
Verical | Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube Min Qty: 17 Package Multiple: 1 Date Code: 2301 | Americas - 380 |
|
$4.2276 / $4.9024 | Buy Now |
|
Bristol Electronics | 1200 |
|
RFQ | ||
|
Quest Components | 304 |
|
$4.8015 / $8.7300 | Buy Now | |
DISTI #
IKW25N120H3
|
TME | Transistor: IGBT, 1.2kV, 50A, 326W, TO247-3, H3 Min Qty: 1 | 25 |
|
$5.7100 / $7.6900 | Buy Now |
DISTI #
IGBT1165
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Rutronik | IGBT 1200V 50A 2.40V TO247-3 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 210 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$3.7500 / $4.6000 | Buy Now |
DISTI #
SMC-IKW25N120H3
|
Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 120000 |
|
RFQ | |
|
Chip 1 Exchange | INSTOCK | 216 |
|
RFQ | |
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Chip1Cloud | IGBT 1200V 50A 326W TO247-3 | 5850 |
|
RFQ | |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 380 |
|
$2.9100 / $3.9700 | Buy Now |
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|
IKW25N120H3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKW25N120H3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 50 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 326 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 397 ns | |
Turn-on Time-Nom (ton) | 61 ns |
This table gives cross-reference parts and alternative options found for IKW25N120H3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKW25N120H3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IKW25N120H3FKSA1 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IKW25N120H3 vs IKW25N120H3FKSA1 |