Part Details for IKW30N65ET7 by Infineon Technologies AG
Overview of IKW30N65ET7 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for IKW30N65ET7
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
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CHIPMALL.COM LIMITED | TO-247-3 IGBTs ROHS | 229 |
|
$2.8447 / $4.2509 | Buy Now |
|
LCSC | TO-247-3 IGBTs ROHS | 229 |
|
$2.9028 / $4.3377 | Buy Now |
Part Details for IKW30N65ET7
IKW30N65ET7 CAD Models
IKW30N65ET7 Part Data Attributes:
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IKW30N65ET7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKW30N65ET7
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 5.7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 188 W | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 256 ns | |
Turn-on Time-Nom (ton) | 32 ns | |
VCEsat-Max | 1.65 V |