Part Details for IKW50N65F5 by Infineon Technologies AG
Overview of IKW50N65F5 by Infineon Technologies AG
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- Number of Functional Equivalents:
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IKW50N65F5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IKW50N65F5-ES
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Mouser Electronics | IGBT Transistors INDUSTRY 14 RoHS: Compliant | 0 |
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$2.3800 / $2.8500 | Order Now |
|
DISTI #
IGBT1363
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Rutronik | IGBT 650V 50A 1.6V TO247-3 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 240 Stock HK - 0 Stock US - 0 Stock SG - 0 |
|
$2.4200 / $2.9800 | Buy Now |
Part Details for IKW50N65F5
IKW50N65F5 CAD Models
IKW50N65F5 Part Data Attributes
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IKW50N65F5
Infineon Technologies AG
Buy Now
Datasheet
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IKW50N65F5
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 4.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 305 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 205 ns | |
| Turn-on Time-Nom (ton) | 35 ns | |
| VCEsat-Max | 2.1 V |