Part Details for IKZ50N65NH5 by Infineon Technologies AG
Overview of IKZ50N65NH5 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IKZ50N65NH5
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IKZ50N65NH5
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TME | Transistor: IGBT, 650V, 54A, 136W, TO247-4, H5 Min Qty: 1 | 0 |
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$3.3200 / $4.6500 | RFQ |
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Wuhan P&S | 650V,85A,IGBT with Anti-Parallel Diode Min Qty: 1 | 42 |
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$2.9800 / $4.1700 | Buy Now |
Part Details for IKZ50N65NH5
IKZ50N65NH5 CAD Models
IKZ50N65NH5 Part Data Attributes:
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IKZ50N65NH5
Infineon Technologies AG
Buy Now
Datasheet
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IKZ50N65NH5
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 85 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 4.8 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 273 W | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 313 ns | |
Turn-on Time-Nom (ton) | 30 ns | |
VCEsat-Max | 2.1 V |