Part Details for IMB9AT108 by ROHM Semiconductor
Overview of IMB9AT108 by ROHM Semiconductor
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Part Details for IMB9AT108
IMB9AT108 CAD Models
IMB9AT108 Part Data Attributes:
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IMB9AT108
ROHM Semiconductor
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Datasheet
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IMB9AT108
ROHM Semiconductor
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7 | |
Collector Current-Max (IC) | 0.07 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 68 | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e2 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |