Datasheets
IPA032N06N3GXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 84A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPA032N06N3GXKSA1 by Infineon Technologies AG

Overview of IPA032N06N3GXKSA1 by Infineon Technologies AG

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Price & Stock for IPA032N06N3GXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 448-IPA032N06N3GXKSA1-ND
DigiKey MOSFET N-CH 60V 84A TO220-3-31 Min Qty: 1 Lead time: 22 Weeks Container: Tube Temporarily Out of Stock
  • 1 $2.8900
  • 50 $2.2900
  • 100 $1.9629
  • 500 $1.7448
  • 1,000 $1.4940
  • 2,000 $1.4067
  • 5,000 $1.3496
$1.3496 / $2.8900 Buy Now
DISTI # IPA032N06N3GXKSA1
Avnet Americas Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: IPA032N06N3GXKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 500 $1.5297
  • 600 $1.4847
  • 1,100 $1.4397
  • 2,500 $1.3947
  • 5,000 $1.3497
  • 25,000 $1.3047
  • 50,000 $1.2597
$1.2597 / $1.5297 Buy Now
Future Electronics Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.4500
  • 1,000 $1.4300
  • 1,500 $1.4200
  • 2,000 $1.4100
  • 2,500 $1.3800
$1.3800 / $1.4500 Buy Now
Future Electronics Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.4500
  • 1,000 $1.4300
  • 1,500 $1.4200
  • 2,000 $1.4100
  • 2,500 $1.3800
$1.3800 / $1.4500 Buy Now
DISTI # 67378329
Verical Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 6 Package Multiple: 1 Date Code: 2315 Americas - 432
  • 6 $2.8566
  • 50 $2.2613
  • 100 $1.9282
  • 500 $1.7024
  • 1,000 $1.4484
  • 2,000 $1.3516
  • 5,000 $1.2843
$1.2843 / $2.8566 Buy Now
Rochester Electronics XPA032N06 - MOSFET N-Channel Single 60V 84A (Tc) RoHS: Compliant Status: Active Min Qty: 1 80
  • 1 $1.5700
  • 25 $1.5400
  • 100 $1.4800
  • 500 $1.4200
  • 1,000 $1.3400
$1.3400 / $1.5700 Buy Now
DISTI # IPA032N06N3GXKSA1
Avnet Americas Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: IPA032N06N3GXKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 500 $1.5297
  • 600 $1.4847
  • 1,100 $1.4397
  • 2,500 $1.3947
  • 5,000 $1.3497
  • 25,000 $1.3047
  • 50,000 $1.2597
$1.2597 / $1.5297 Buy Now
DISTI # IPA032N06N3GXKSA1
TME Transistor: N-MOSFET, unipolar, 60V, 84A, 41W, TO220FP Min Qty: 1 0
  • 1 $2.5900
  • 5 $2.2900
  • 25 $2.0700
  • 100 $1.9700
$1.9700 / $2.5900 RFQ
Chip1Cloud MOSFET N-CH 60V 84A TO220-3-31 / Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220FP Tube 20000
RFQ
DISTI # SP000453608
EBV Elektronik Power MOSFET, N Channel, 60 V, 84 A, 2.6 Milliohms, TO-220, 3 Pins, Through Hole (Alt: SP000453608) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 2480792
Farnell MOSFET, N-CH, 60V, 84A, TO-220-3 RoHS: Compliant Min Qty: 1 Lead time: 29 Weeks, 1 Days Container: Each 0
  • 1 $3.1872
  • 10 $2.4218
  • 100 $1.9198
  • 250 $1.8069
  • 500 $1.6814
  • 1,000 $1.3928
$1.3928 / $3.1872 Buy Now

Part Details for IPA032N06N3GXKSA1

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IPA032N06N3GXKSA1 Part Data Attributes:

IPA032N06N3GXKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPA032N06N3GXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 84A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 235 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 84 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 336 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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