-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
93AC7088
|
Newark | Mosfet, N-Ch, 600V, 37A, 29W, To-220Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:37A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.069Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPA60R080P7XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 493 |
|
$3.5100 / $5.5600 | Buy Now |
DISTI #
79AH3136
|
Newark | High Power_New Rohs Compliant: Yes |Infineon IPA60R080P7XKSA1 Min Qty: 500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$3.8400 | Buy Now |
DISTI #
IPA60R080P7XKSA1-ND
|
DigiKey | MOSFET N-CH 600V 37A TO220 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
578 In Stock |
|
$2.4002 / $4.9300 | Buy Now |
DISTI #
IPA60R080P7XKSA1
|
Avnet Americas | Transistor MOSFET N-CH 600V 37A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA60R080P7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$2.8554 | Buy Now |
DISTI #
726-IPA60R080P7XKSA1
|
Mouser Electronics | MOSFET HIGH POWER_NEW RoHS: Compliant | 0 |
|
$2.4000 / $4.9200 | Order Now |
DISTI #
V36:1790_18195647
|
Arrow Electronics | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2349 | Americas - 500 |
|
$2.2520 / $4.8410 | Buy Now |
DISTI #
E02:0323_11639622
|
Arrow Electronics | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2404 | Europe - 200 |
|
$2.2132 / $4.1589 | Buy Now |
DISTI #
73928867
|
RS | Transistor, MOSFET, 600V CoolMOS, P7 power, 7th Gen, 650V, 80mOhm, 110A, TO220 | Infineon IPA60R080P7XKSA1 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 0 |
|
$3.1600 | RFQ |
|
Future Electronics | Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
|
$2.3900 / $2.4800 | Buy Now |
|
Future Electronics | Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
|
$2.3900 / $2.4800 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IPA60R080P7XKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPA60R080P7XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 118 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |