Datasheets
IPA60R250CPXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN

Part Details for IPA60R250CPXKSA1 by Infineon Technologies AG

Overview of IPA60R250CPXKSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IPA60R250CPXKSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics IPA60R250 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 21936
  • 1 $1.4300
  • 25 $1.4000
  • 100 $1.3500
  • 500 $1.2900
  • 1,000 $1.2200
$1.2200 / $1.4300 Buy Now
DISTI # IPA60R250CPXKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 12A, 33W, TO220FP Min Qty: 1 0
  • 1 $3.2300
  • 3 $2.7800
  • 10 $2.2400
  • 100 $1.9400
$1.9400 / $3.2300 RFQ

Part Details for IPA60R250CPXKSA1

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IPA60R250CPXKSA1 Part Data Attributes

IPA60R250CPXKSA1 Infineon Technologies AG
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IPA60R250CPXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description GREEN, PLASTIC, TO-220FP, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 345 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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