Part Details for IPB019N06L3GXT by Infineon Technologies AG
Overview of IPB019N06L3GXT by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPB019N06L3GXT
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB019N06L3GATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB019N06L3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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RFQ |
Part Details for IPB019N06L3GXT
IPB019N06L3GXT CAD Models
IPB019N06L3GXT Part Data Attributes
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IPB019N06L3GXT
Infineon Technologies AG
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Datasheet
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IPB019N06L3GXT
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 634 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB019N06L3GXT
This table gives cross-reference parts and alternative options found for IPB019N06L3GXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB019N06L3GXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB019N06L3G | Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB019N06L3GXT vs IPB019N06L3G |
| PSMN1R7-60BS | Power Field-Effect Transistor | Nexperia | IPB019N06L3GXT vs PSMN1R7-60BS |
| 934065175118 | Power Field-Effect Transistor | Nexperia | IPB019N06L3GXT vs 934065175118 |
| PSMN1R7-60BS,118 | PSMN1R7-60BS - N-channel 60 V 2 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin | Nexperia | IPB019N06L3GXT vs PSMN1R7-60BS,118 |
| IPB019N06L3GATMA1 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB019N06L3GXT vs IPB019N06L3GATMA1 |