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Part Details for IPB020N10N5 by Infineon Technologies AG
Overview of IPB020N10N5 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPB020N10N5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IPB020N10N5
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Mouser Electronics | MOSFET N-Ch 100V 120A D2PAK-2 RoHS: Compliant | 506 |
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$3.5800 / $6.7300 | Buy Now |
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DISTI #
69808080
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Verical | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R Min Qty: 13 Package Multiple: 1 Date Code: 2301 | Americas - 1000 |
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$4.9747 / $6.0787 | Buy Now |
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Quest Components | 800 |
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$5.5050 / $11.0100 | Buy Now | |
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DISTI #
TMOSP11477
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Rutronik | N-CH 100V 120A 2mOhm TO263 RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel |
Stock DE - 1000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$3.3300 | Buy Now |
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Chip1Cloud | N-channel, normal level | 2500 |
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RFQ | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 1000 |
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$3.6700 / $5.0100 | Buy Now |
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LCSC | TO-263-3 MOSFETs ROHS | 700 |
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$4.2516 / $4.7215 | Buy Now |
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Win Source Electronics | N-channel, normal level | 36340 |
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$3.8630 / $5.7940 | Buy Now |
Part Details for IPB020N10N5
IPB020N10N5 CAD Models
IPB020N10N5 Part Data Attributes:
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IPB020N10N5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB020N10N5
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 979 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.002 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |