-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
47W3462
|
Newark | Mosfet, N Channel, 100V, 180A, To263-7, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:180A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon IPB025N10N3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 13304 |
|
$4.3100 / $6.8300 | Buy Now |
DISTI #
IPB025N10N3GATMA1CT-ND
|
DigiKey | MOSFET N-CH 100V 180A TO263-7 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
446 In Stock |
|
$3.2200 / $6.6100 | Buy Now |
DISTI #
IPB025N10N3GATMA1
|
Avnet Americas | MV POWER MOS - Tape and Reel (Alt: IPB025N10N3GATMA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$2.8833 / $3.5011 | Buy Now |
DISTI #
IPB025N10N3GATMA1
|
Avnet Americas | MV POWER MOS - Tape and Reel (Alt: IPB025N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$2.7803 / $3.3982 | Buy Now |
DISTI #
726-IPB025N10N3GATMA
|
Mouser Electronics | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant | 287 |
|
$3.5600 / $6.6100 | Buy Now |
DISTI #
V36:1790_06378745
|
Arrow Electronics | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2333 | Americas - 66000 |
|
$3.2050 / $3.4000 | Buy Now |
DISTI #
E02:0323_00274912
|
Arrow Electronics | Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2409 | Europe - 6000 |
|
$2.9947 / $3.1511 | Buy Now |
DISTI #
71814174
|
RS | Infineon N-Channel MOSFET,180A,100V OptiMOS 3,7-Pin D2PAK | Infineon IPB025N10N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
|
$5.1200 | RFQ |
|
Future Electronics | Single N-Channel 100 V 2.5 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
|
$3.3600 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 2.5 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
|
$3.3600 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IPB025N10N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB025N10N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, GREEN, PLASTIC, TO-263, 7 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB025N10N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB025N10N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB180N10S4-02 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB025N10N3GATMA1 vs IPB180N10S4-02 |
IPB180N10S402ATMA1 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB025N10N3GATMA1 vs IPB180N10S402ATMA1 |
IPB024N10N5ATMA1 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6 | Infineon Technologies AG | IPB025N10N3GATMA1 vs IPB024N10N5ATMA1 |