Part Details for IPB033N10N5LF by Infineon Technologies AG
Results Overview of IPB033N10N5LF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPB033N10N5LF Information
IPB033N10N5LF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB033N10N5LF
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
LCSC | 100V 108A 3.3m10V100A 179W 4.1V 1 N-channel TO-263-3 MOSFETs ROHS | 1000 |
|
$2.9986 / $4.9328 | Buy Now |
|
LCSC | 100V 108A 3.3m10V100A 179W 4.1V 1 N-channel TO-263-3 MOSFETs ROHS | 2 |
|
$4.3405 / $5.2530 | Buy Now |
Part Details for IPB033N10N5LF
IPB033N10N5LF CAD Models
IPB033N10N5LF Part Data Attributes
|
IPB033N10N5LF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB033N10N5LF
Infineon Technologies AG
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 273 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 159 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 13 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 179 W | |
Pulsed Drain Current-Max (IDM) | 636 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |